savantic semiconductor product specification silicon npn power transistors 2SC4916 d escription with to-3p(h)is package high speed ;high speed low saturation voltage bult-in damper diode applications horizontal deflection output for high resolution display,colortv high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i cm collector current-peak 14 a i b base current 3.5 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4916 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =300ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =5a; i b =1a 5 v v besat base-emitter saturation voltage i c =5a; i b =1a 1.5 v i cbo collector cut-off current v cb =1500v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 83 250 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 20 h fe-2 dc current gain i c =5a ; v ce =5v 3.8 8 c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 160 pf v f diode forward voltage i f =5a 1.3 1.8 v f t transition frequency i e =0.1a ; v ce =10v 1 3 mhz switching times resistive load t s storage time 2.0 3.0 s t f fall time i cp =5a;i b1 =1a i b2 =-2a; r l =39 b 0.1 0.2 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4916 package outline fig.2 outline dimensions (unindicated tolerance: 0.20 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC4916
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